Publications

Refereed Journal Articles

A. S. Senarath, S. Islam, A. Sengupta, M. W. McCurdy, T. Anderson, A. Jacobs, R. Kaplar, D. R. Ball, E. X. Zhang, S. T. Pantelides, R. A. Reed, M. A. Ebrish, D. M. Fleetwood, J. D. Caldwell, R. D. Schrimpf; Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design. Applied Physics Letters 2024; 124 (13)

M. A. Ebrish, M. A. Porter, A. G. Jacobs, J. C. Gallagher, R. J. Kaplar, B. P. Gunning, K. D. Hobart, T. J. Anderson. “Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes,” Applied Physics Express 2023, 16 (11), 116501.

M. A. Ebrish, M. Porter, A.D. Koehler, A. G. Jacobs, J.C. Gallagher, R. J. Kaplar, B. P. Gunning, K. D. Hobart, T. J. Anderson “Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination,” Crystals 2022, 12, 623.

J. C. Gallagher, M. A. Ebrish, M. A. Porter, A. G. Jacobs, B. Gunning, R. Kaplar, K. D.Hobart, T. J. Anderson. “Optimizing Performance and Yield of Vertical GaN Diodes on Large Format Wafers Using Long-Range Optical Techniques,” Scientific Reports 12, no. 1 (2022): 1-8.

P. Pandey, T. M. Nelson, W. M. Collings, M. R. Hontz, D. G. Georgiev, A. D. Koehler, T. J. Anderson, J. C. Gallagher, G. M. Foster, A. G. Jacobs, M. A. Ebrish, B. P. Gunning, R. J. Kaplar, K. D. Hobart, R. Khanna. “A Simple Edge Termination Design for Vertical GaN P-N Diodes” IEEE Transactions on Electron Devices, Volume: 69, Issue: 9, September 2022.

S. Han, J. Song, M. Sadek, A. Molina, M. A. Ebrish, S. Mohney, T. J. Anderson, R. Chu. “12.5-kV GaN Super-Heterojunction Schottky Barrier Diodes,” IEEE TED., Vol. 68, Issue: 11 (2021): 5736 – 5741.

M. A. Ebrish, T. J. Anderson, A. G. Jacobs, J. C. Gallagher, J. K. Hite, M. A. Mastro, B Feigelson, Y. Wang, M. Liao, M. Goorsky, K. D. Hobart, “Process Optimization for Selective Area Doping of GaN by Ion Implantation,” J. Electron. Mater, vol. 50, no. 8, (2021).

J. C. Gallagher, T. J. Anderson, A. D. Koehler, M. A. Ebrish, G. M. Foster, M. A. Mastro, J. K. Hite, B. P. Gunning, R. J. Kaplar, K. D. Hobart, and F. J. Kub, “Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance,” J. Electron. Mater, (2021).

M. J. Tadjer, K. Sasaki, D. Wakimoto, T. J. Anderson, M. A. Mastro, J. C. Gallagher, A. G. Jacobs, A. L. Mock, A. D. Koehler, M. A. Ebrish, K. D. Hobart, and A. Kuramata, “Delta-doped β-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterostructure field-effect transistors by ozone molecular beam epitaxy ,” J. Vac. Sci. Technol. A 39, (2021).

J. K. Hite, M. A. Mastro, J. C. Gallagher, M. A. Ebrish, T. J. Anderson, J. A. Freitas. “Understanding the Interaction Between Substrate and Epitaxy in Homoepitaxial GaN Growth Using Raman Mapping and Photoluminescence Spectroscopy” ECS Transactions 98 (2020) : 63-67

M. A. Ebrish, T. J. Anderson, A.D. Koehler, G.M. Foster, J.C. Gallagher, R. J. Kaplar, B. P. Gunning, K. D. Hobart, “A study on the impact of mid-gap defects on vertical GaN diodes,” IEEE Trans. Semicond. Manuf. 33, (2020).

G. M. Foster, A.D. Koehler, M. A. Ebrish, J. C. Gallagher, T. J. Anderson, B. Noesges, L. Brillson, B. P. Gunning, K. D. Hobart, F. Kub, “Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments,” Appl. Phys. Lett. 117, (2020).

V. Meyers, E. Rocco, T. J. Anderson, J. C. Gallagher, M. A. Ebrish, K. Jones, M. Derenge, M. Shevelev, V. Sklyar, K. Hogan, B. McEwen, F. Shahedipour-Sandvik, “p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing,” J. Appl. Phys. 128, (2020).

E.J. Olson, R. Ma, T. Sun, M. A. Ebrish, N. Haratipour, K. Min, N. R. Aluru, and S. J. Koester “Capacitive Sensing of Intercalated Molecules Using Graphene,” ACS Appl. Mater. Interfaces 7, (2015).

M. A. Ebrish, E. J. Olson, and S. J. Koester “Effect of Noncovalent Basal Plane Functionalization on the Quantum Capacitance in Graphene,” ACS Appl. Mater. Interfaces 6, (2014).

D. A. Deen, E.J. Olson, M. A. Ebrish, and S. J. Koester “Graphene- based quantum capacitance wireless vapor sensors,” IEEE Sensors Journal, VOL. 14, NO. 5, (2014).

Y. Su, M. A. Ebrish, E.J. Olson, and S.J. Koester “SnSe2 field-effect transistors with high drive current,” Appl. Phys. Lett. 103, (2013).

M. A. Ebrish, H. Shao, and S. J. Koester, “Operation of multi-finger graphene quantum capacitance varactor using planarized local bottom gate electrodes,” Appl. Phys. Lett. 100, (2012).

Conference Presentations

M. A. Ebrish, A. G. Jacobs, M. Porter, P. Pandey, T. Nelson, R. Khanna, A. Koehler2, J. Gallagher, R. J. Kaplar, B. Gunning, K. D. Hobart, and T. J. Anderson “Impact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design,” presented atCompound Semiconductor Week 2022, June 2022, Ann Arbor, MI.

M. A. Ebrish, T. J. Anderson, A. G. Jacobs, M. Porter, J. Gallagher, R. J. Kaplar, B. Gunning, K. D. Hobart, and F. Kub “Edge Termination Design for Planar 1.2kV Vertical GaN PiN Diodes,” presented at GOMACTech 2022, March 2022, Miami, FL.

M. A. Ebrish, T. J. Anderson, A. G. Jacobs, M. Porter, J. Gallagher, R. J. Kaplar, B. Gunning, K. D. Hobart, and F. Kub “Understanding the Electroluminescence Signature of High-Voltage Vertical GaN Pin Diodes with Different Edge Termination Designs,” presented at 240^th ECS Meeting, October 2021, virtual. (Invited)

M. A. Ebrish, T. J. Anderson, M. Porter, A. G. Jacobs, J.C. Gallagher, R. J. Kaplar, B. P. Gunning, K. D. Hobart, “Investigation of Hybrid Edge Termination Designs for Vertical 1.2kV GaN PiN Diodes,” presented at the 50^th Lester Eastman Conference on High Performance Devices, South Bend,IN, August 2021.

J. C. Gallagher, M. A. Ebrish, A. G. Jacobs, A. D. Koehler, G. P. Brenden, R. J. Kaplar, K. D. Hobart, T. J. Anderson, “Using Long Range Optical Techniques to Predict Vertical GaN Diode Performance” presented at the 50^th Lester Eastman Conference on High Performance Devices, South Bend,IN, August 2021.

M. A. Ebrish, T. J. Anderson, M. Porter, A. G. Jacobs, J.C. Gallagher, R. J. Kaplar, B. P. Gunning, K. D. Hobart, “Ion Implanted Edge Termination Designs for High Current 1.2kV GaN Vertical PiN Diodes,” presented at the 63^rd Electronic Materials Conference, June 2021, virtual.

R. J. Kaplar, B. P. Gunning, A. A. Allerman, M. A. Crawford, J. D. Flicker, A. M. Armstrong, L. Yates, A. T. Binder, J. R. Dickerson, G. Pickrell, P. Sharps, T. J. Anderson, J. C. Gallagher, A. G. Jacobs, A. D. Koehler, M. J. Tadjer, K. D. Hobart, M. A. Ebrish, M. A. Porter, R. Martinez, K. Zheng, D. Ji, S. Chowdhury, O. Aktas, J. Cooper. “Development of High-Voltage Vertical GaN PN Diodes,” presented at 2020 IEEE International Electron Devices Meeting, December 2020, virtual. (Invited)

M. A. Ebrish, T. J. Anderson, A. G. Jacobs, B. Feigelson, J. K. Hite, M. A. Mastro, Y. Wang, M. Goorsky, K. Hobart, “Process Optimization for Selective Area Doping of GaN by Ion Implantation,” presented at the 62^nd Electronic Materials Conference, Virtual, June 2020.

G. M. Foster, A. D. Koehler, M. A. Ebrish, T. J. Anderson, B. Gunning, R. J. Kaplar, K. D. Hobart, F. J. Kub, “Recovery of Sidewall Etch Damage in p-type Gallium Nitride,” presented at the 62^nd Electronic Materials Conference, June 2020, virtual.

J. C. Gallagher, T. J. Anderson, A. D. Koehler, M. A. Ebrish, M. A. Mastro, J. K. Hite, B. Gunning, R. Kaplar, K. D. Hobart, F. J. Kub. “Predicting the Quality of Vertical GaN Devices Using Long-Range Optical Techniques,” presented at the 62^nd Electronic Materials Conference, June 2020, virtual.

M. A. Ebrish, T. J. Anderson, J. C. Gallagher, J. Spencer, J. K. Hite, M. A. Mastro, K. D. Hobart, F. J. Kub. “Exploring the Capability of Hyperspectral Electroluminescence for Process Monitoring in Vertical GaN Devices” Conference Digest (2020) at 2020 International Conference on Compound Semiconductor Manufacturing Technology, 11-14 May 2020 Tuscon, AZ.

M. A. Ebrish, F. Torregrosa, B. Roux, M. J. P. Hopstaken, A. F. Petrescu, A. J. Varghese, L. Viviand, V. Pai, S. Skordas, H. Jagannathan, and O. Gluschenkov, “Plasma doping conformality study in FinFET structures,” Oral presentation at AVS, Tampa, FL, October 2017.

M. A. Ebrish and S. J. Koester “Understanding Graphene’s Interface with Different Dielectrics in Graphene Devices,” Oral presentation at MRS, Phoenix, AZ, April 2017.

M. A. Ebrish and S. J. Koester “Understanding graphene interface with different dielectrics in a local back gated graphene field effect transistors,” Oral presentation at 10th Albany Nanotechnology Symposium, Albany, NY, November 2016.

M. A. Ebrish and S. J. Koester “Electrical Characterization of all-CVD Graphene / Hexagonal Boron Nitride Interface: Comparison with HfO₂,” Oral presentation and Poster at TECHCON, Austin, TX, September 2014.

M. A. Ebrish and S. J. Koester “All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate,” presented at the 72^nd Device Research Conference (DRC), Santa Barbara, CA, June 2014.

M. A. Ebrish and S. J. Koester “Electrical Characterization of Dielectric/Graphene Interfaces for Spintronic Applications,” C-SPIN Annual Review (2013).

M. A. Ebrish, E. J. Olson, and S. J. Koester, “Understanding the effect of glucose oxidase surface functionalization on the material and electronic properties of graphene,” presented at the 55th Electronic Materials Conference, Notre Dame, IN, June 2013.

M. A. Ebrish, D. A. Deen, and S. J. Koester, “Border trap characterization in metal-oxide-graphene capacitors with HfO₂ dielectrics,” presented at the 71st Device Research Conference (DRC), Notre Dame, IN, June 2013.

E.J. Olson, D. A. Deen, M. A. Ebrish, A. Basu, Y. C. Kudva, P. Mukherjee, and S. J. Koester, “Wireless graphene-based quantum capacitance sensors for continuous glucose monitoring,” presented at TechConnect World, Washington, DC, May 2013.

M. A. Ebrish, and S. J. Koester, “Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gates,” presented at the 70th Device Research Conference (DRC), State College, PA, June 2012.

Issued US Patents

S. Zare, M. Rizzolo, M. A. Ebrish, T. E. Standaert, “Dielectric retention and method of forming memory pillar,” US20210399212A1 (2021).

L. A. Clevenger, L. H. Clevenger, M. A. Ebrish, G. Karve, F. Lie, E. A. De Silva, N. A. Saulnier, and I. P. Seshadri, “Structure and method for equal substrate to channel height between N and P fin-FETs,” US11043494B2 (2021).

M. A. Ebrish, F. Lie, N. Loubet, G. Karve, I. Seshadri, L. A. Clevenger, and L. H. Clevenger, “Nanosheet transistor barrier for electrically isolating the substrate from the source or drain regions,” US 10818751 (2020).

M. A. Ebrish, X. Liu, B. Anderson, H. Bu, J. Wang, “Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs,” US 10811528 (2020).

M. A. Ebrish, O. Gluschenkov, I. P. Seshadri, E. A. De Silva, “High temperature ultra-fast annealed soft mask for semiconductor devices,” US 10804106 (2020).

M. A. Ebrish, M. Rizzolo, S. Nguyen, R. R. Patlolla, and D. F. Canaperi, “Semiconductor structures of more uniform thickness,” US 16204336 (2020).

F. Lie, M. A. Ebrish, E. A. De Silva, I. P. Seshadri, G. Karve, L. A. Clevenger, L. H. Clevenger, and N. Loubet, “Nanosheet substrate to source/drain isolation,” US 16102198 (2020).

M. A. Ebrish, O. Gluschenkov, “Reducing series resistance between source and/or drain regions and a channel region,” US 10319855B2 (2019).

G. Karve, F. Lie, I. P. Seshadri, M. A. Ebrish, L. H. Clevenger, E. A. De Silva, and, N. A. Saulnier, “Vertical transport FET with two or more gate lengths,” US 10361127 (2017).

I. C. Chu, L. A. Clevenger, L. H. Clevenger, M. A. Ebrish, G. Karve, F. Lie, D. Priyadarshini, N. A. Saulnier, and I. P. Seshadri, “Separate N and P fin etching for reduced CMOS device leakage,” US 9711507 (2017).

M. A. Ebrish, H. Jagannathan, S. Mochizuki, and A. Reznicek, “Contained punch through stopper for CMOS structures on a strain relaxed buffer substrate,” US 9666486 (2017).

M. A. Ebrish, O. Gluschenkov, S. Mochizuki, and A. Reznicek, “High acceptor level doping in silicon germanium,” US 9799736 (2017).